Produktinformation
- Digallium trisulfide
- Digallium trisulphide
- Gallium sesquisulfide
- Gallium sulfide (Ga2S3)
- Gallium sulfide (Ga<sub>2</sub>S<sub>3</sub>)
- Gallium trisulfide
- Gallium(3+) sulfide
- Thioxo-Thioxogallanylsulfanyl-Gallane
Gallium sulfide is a semiconductor with a wide band gap that can be used as an infrared detector in various applications, such as x-ray absorption and microscopy. Gallium sulfide crystals are grown by the process of liquid phase epitaxy, which is a technique that involves the use of chemicals to form thin films on the crystal surface. The growth rate is determined by the activation energy and the chemical stability of gallium sulfide. Gallium sulfide has been shown to have high values for activation energies, which aids in its use as a detector. It also has high values for x-ray absorption, which aids in its use as an infrared detector. Gallium sulfide can be made into particles by grinding it into powder or forming it into pellets. These particles are useful in optical devices such as laser diodes and LEDs.
Chemische Eigenschaften
Technische Anfrage zu: 3D-MAA02422 Gallium(III) Sulfide
Wenn Sie ein Angebot anfordern oder eine Bestellung aufgeben möchten, legen Sie stattdessen die gewünschten Produkte in Ihren Warenkorb und fordern Sie dann ein Angebot oder eine Bestellung an aus dem Warenkorb. Es ist schneller, billiger und Sie können von den verfügbaren Rabatten und anderen Vorteilen profitieren.