TITANIUM TETRAKIS(DIMETHYLAMIDE), 99+%
CAS: 3275-24-9
Ref. 3H-OMTI080
5g | Nachfragen | |
25g | Nachfragen | |
2kg | Nachfragen | |
100g | Nachfragen |
Produktinformation
- TDMAT
- Dimethylamine, titanium(4+) salt
- Methanamine, N-methyl-, titanium(4+) salt
- Methanamine, N-methyl-, titanium(4+) salt (4:1)
- Tdmat
- Tetra(dimethylamino)titanium
- Tetrakis(N-methylmethanaminato)titanium
- Tetrakis(dimethylamido)titanium
- Tetrakis(dimethylamido)titanium(IV)
- Tetrakis(dimethylamino)titanium
- Mehr Synonyme anzeigen
- Titanium octamethyltetraamide
- Titanium tetra(N,N-dimethylamide)
- Titanium tetradimethylamide
- Titanium tetradimethylamine
- Titanium(4+) Tetrakis(Dimethylazanide)
- Titanium(4+) dimethylamide
- Titanium(IV) dimethylamide
- Titanium, tetrakis(dimethylamino)-
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Titanium tetrakis(dimethylamide); TDMAT; Tetrakis(dimethylamido)titanium; Tetrakisdimethylaminotitanium
Catalyzes the preparation of N-heterocycles via C-N bond formation
Chemische Eigenschaften
Technische Anfrage zu: 3H-OMTI080 TITANIUM TETRAKIS(DIMETHYLAMIDE), 99+%
Wenn Sie ein Angebot anfordern oder eine Bestellung aufgeben möchten, legen Sie stattdessen die gewünschten Produkte in Ihren Warenkorb und fordern Sie dann ein Angebot oder eine Bestellung an aus dem Warenkorb. Es ist schneller, billiger und Sie können von den verfügbaren Rabatten und anderen Vorteilen profitieren.