Produktinformation
Name:TETRAIODOSILANE
Marke:Gelest
Beschreibung:ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Tetraiodosilane; Silicon tetraiodide; Silicon iodide
?Hform: -189.5 kJ/mol?Hfus: -29 kJ/molUV absorption max: 284 nmMay be reduced to silicon metalReacts with NH3 <500 °C to form SiNCan be ignited in air forming SiO2
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Tetraiodosilane; Silicon tetraiodide; Silicon iodide
?Hform: -189.5 kJ/mol?Hfus: -29 kJ/molUV absorption max: 284 nmMay be reduced to silicon metalReacts with NH3 <500 °C to form SiNCan be ignited in air forming SiO2
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Chemische Eigenschaften
Molekulargewicht:535.7
Formel:I4Si
Farbe/Form:Off-White To Pink/Purple Solid