Metales

Copper(II) 5,9,14,18,23,27,32,36-octabutoxy-2,3-naphthalocyanine is a copper compound with a molecular formula of Cu(OCOCN)8. It has been shown to be a n-type semiconductor and can be used for applications in photovoltaic cells. Copper(II) 5,9,14,18,23,27,32,36-octabutoxy-2,3-naphthalocyanine has been shown to have high quantum efficiency and absorption in the near ultraviolet region. The density of this compound is 2.6 g/cm3 at room temperature.

Iron(III) 2-ethylhexanoate is a ferric salt that is used as an acid catalyst for the synthesis of ethyl esters. It also acts as an oxidant and can be used in organic chemistry as a chemical reagent to produce ethyl esters from carboxylic acids. Iron(III) 2-ethylhexanoate reacts with iron oxide particles to form ferric hydroxide, which is then purified by calcium carbonate. This compound also has potential applications in nanotechnology, where it has been shown to be able to act as a catalyst for the synthesis of nanowires. The adsorption kinetics of this compound have been studied using various solvents and metal hydroxides, showing that the rate of adsorption depends on the type of solvent and metal hydroxide used. Iron(III) 2-ethylhexanoate is synthesized by reacting ethyl linoleate with iron oxide particles and calcium stearate

<p>ALD Material<br>Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.<br>Tetrakis(dimethylamino)tin; Octamethylstannanetetraamine; Tin IV dimethylamide<br>Reacts with tris(aminoalkyl)amines, yielding azastannatranes<br></p>

<p>ALD Material<br>Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.<br>Tetramethyltin; Tetramethylstannane<br>ΔHcomb: 903.5 kcal/molΔHform, gas, 27 °: -13.6 kcal/mol ΔHvap: 6.8 kcal/molSn-Me bond dissociation energy: 227 kJ/molEa, pyrolysis: 41.1 kcal/molVapor pressure, -21 °C: 10 mmVapor pressure, 20 °C: 90 mmAllows synthesis of even numbered alkanesConverts acid chlorides to methyl ketones with benzylchlorobis(triphenyl phosphine)palladiumForms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphenylphosphine)nickelFor CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensorsPyrolyzed in vacuum to tin at 600-750 °CPyrolyzed oxidatively to SnO at 350-600 °CForms transparent conductive oxides for photovoltaics by Plasma-enhanced chemical vapor deposition (PECVD)Higher purity grade available, SNT7560.1<br></p>

<p>i-Propylmagnesium bromide, 2.9M (35wt% ±1wt%) in 2-methyltetrahydrofuran</p>

<p>Benzylmagnesium chloride, 1-2 M in THF</p>

<p>Allylmagnesium bromide, 0.95-1.1 M in ether</p>

<p>sec-Butylmagnesium chloride, lithium chloride complex 1.2M (15wt% ±1wt%) in tetrahydrofuran</p>

<p>n-Butylmagnesium chloride, 1.5-3.0 M in THF</p>

<p>Ethylmagnesium chloride, 2M in ether</p>

<p>Methylmagnesium bromide, 3M in ether</p>

<p>i-Propylmagnesium chloride, 2-3M in ether</p>

<p>Applications Chromium dioxide (CAS# 12018-01-8) is a useful research chemical compound.<br></p>