Información del producto
Nombre:TRIS(DIMETHYLAMINO)SILANE
Sinónimos:
- 3DMAS
Marca:Gelest
Descripción:ALD MaterialAtomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.Tris(dimethylamino)silane; Tris(dimethylamido)silylhydride; N,N,N',N',N'',N''-HexamethylsilanetriamineAIR TRANSPORT FORBIDDENVapor pressure, 4 °C: 1 6 mmHydrosilylates olefins in presence of Rh2Cl2(CO)4Reacts with ammonia to form silicon nitride prepolymersEmployed in low pressure CVD of silicon nitride
Aviso:Nuestros productos están destinados únicamente para uso en laboratorio. Para cualquier otro uso, por favor contáctenos.
Propiedades químicas
Peso molecular:161.32
Fórmula:C6H19N3Si
Pureza:97%
Color/Forma:Straw Liquid
Consulta técnica sobre: TRIS(DIMETHYLAMINO)SILANE
Use el carrito para solicitar presupuestos o pedidos
Si desea solicitar un presupuesto o realizar un pedido, por favor añada los productos deseados a su carrito y solicite un presupuesto o pedido desde el carrito. Es más rápido, más barato, y podrá beneficiarse de los descuentos y las ventajas disponibles.