CAS 12055-23-1
:Oxyde d'hafnium
- Dioxido De Hafnio
- Dioxohafnium
- Dioxyde d'hafnium
- Hafnia
- Hafnia (HfO2)
- Hafnia (HfO<sub>2</sub>)
- Hafnium (IV)�oxide (99.998%-Hf) PURATREM
- Hafnium dioxide
- Hafnium dioxide (HfO2)
- Hafnium dioxide (HfO<sub>2</sub>)
- Hafnium oxide
- Hafnium oxide (HfO2)
- Hafnium oxide (HfO<sub>2</sub>)
- Hafnium(+4) Cation
- Hafniumdioxid
- Hafniumoxideoffwhitepowder
- Hafniumoxidesinteredlumps
- Hafnotrast
- Hf 05
- Hf 05 (oxide)
- Nsc 158931
- Voir plus de synonymes
Hafnium(IV) oxide, 99.95%, (metals basis excluding Zr), Zr typically <0.5%
CAS :Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi
Formule :HfO2Degré de pureté :0.5%Masse moléculaire :210.49Hafnium(IV) oxide, 99.9% (metals basis excluding Zr), Zr <0.5%
CAS :Hafnium(IV) oxide is an intermediate. Hafnia is used in optical coatings, and as a high- dielectric in DRAM capacitors and in advanced metal-oxide-semiconductor devices. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and lab
Formule :HfO2Degré de pureté :0.5%Masse moléculaire :210.49Hafnium(IV) oxide, 99% (metals basis excluding Zr), Zr <1.5%
CAS :Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi
Formule :HfO2Degré de pureté :1.5%Couleur et forme :White, PowderMasse moléculaire :210.49Hafnium(IV) oxide, tech.
CAS :Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materiFormule :HfO2Masse moléculaire :210.49Hafnium(IV) oxide, Spectrographic Grade, 99.9% (metals basis excluding Zr), Zr typically <80ppm
CAS :Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi
Formule :HfO2Degré de pureté :99.9%Masse moléculaire :210.49Hafnium(IV) oxide, 99.995%, (metals basis excluding Zr), Zr typically <0.2%
CAS :Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi
Formule :HfO2Degré de pureté :0.2%Masse moléculaire :210.49Hafnium(IV) oxide, 99.99% (metals basis excluding Zr), Zr <100ppm
CAS :Hafnium(IV) oxide is used as Intermediates, Paint additives and coating additives, metal Products. And it is also used in optical coatings, as a refractory material in the insulation of such devices as thermocouples. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesa
Formule :HfO2Degré de pureté :99.99%Masse moléculaire :210.49Hafnium(IV) oxide, 98%
CAS :Hafnium(IV) oxide, 98%
Formule :HfO2Degré de pureté :98%Couleur et forme :off-white pwdr.Masse moléculaire :210.49Hafnium(IV) oxide (99.995%-Hf, <0.15% Zr) PURATREM
CAS :Hafnium(IV) oxide (99.995%-Hf, <0.15% Zr) PURATREM
Formule :HfO2Degré de pureté :(99.995%-Hf, <0.15% Zr)Couleur et forme :off-white pwdr.Masse moléculaire :210.49Hafnium(IV) oxide, lump
CAS :Hafnium(IV) oxide, lumpDegré de pureté :97%Masse moléculaire :210.4888g/molHafnium(IV) oxide
CAS :Hafnium(IV) oxideDegré de pureté :99.99%,-200meshCouleur et forme :Off-White PowderMasse moléculaire :210.49g/molHafnium(IV) oxide nanopowder, 70nm, 99.9%
CAS :Formule :HfO2Degré de pureté :≥ 99.9%Couleur et forme :White to tan powder or crystalMasse moléculaire :210.49Hafnium oxide, 99+% (contains max. 4.5% Zr)
CAS :Formule :HfO2Degré de pureté :≥ 99.0% (sum of Hf and Zr oxides after calcination)Couleur et forme :White powderMasse moléculaire :210.49Hafnium oxide, 99+% (contains max. 0.5% Zr)
CAS :Formule :HfO2Degré de pureté :≥ 99.0%Couleur et forme :White to off-white powder or crystalsMasse moléculaire :210.49Hafnium oxide, 99.9%
CAS :Formule :HfO2Degré de pureté :≥ 99.9% (excluding Zr)Couleur et forme :White to off-white powderMasse moléculaire :210.49Hafnium oxide, 99.9%
CAS :Formule :HfO2Degré de pureté :≥ 99.9% (excluding Zr)Couleur et forme :White powderMasse moléculaire :210.49Hafnium oxide (HfO2)
CAS :Formule :AsMnDegré de pureté :98%Couleur et forme :SolidMasse moléculaire :129.8596





