Réactifs métalliques pour la synthèse organique

ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Titanium isopropoxide; Isopropyltitanate; Titanium tetra(2-propoxide); Tetraisopropyl titanate
Viscosity: 2 cStΔHform: -377 kcal/molΔHvap: 14.7 kcal/molMetal content: 16.6-16.9% TiVapor pressure, 50 °C: 0.9 mmVapor pressure, 100 °C: 19 mmSoluble: heptane, isopropanolMolecular complexity: 1.4Vapor phase pyrolysis gives oxideYields coatings of barium titanate in combination with Ba(OR)2Utilized in spray pyrolysis synthesis of BaTiO3 and SrTiO3Catalyst for rearrangement and cleavage of epoxy alcoholsCatalyst for cyclization of ω-amino acids to lactamsIn combination with lead alkyls yields lead zirconate titanate (PZT) films by Metal-Organic Chemical Vapour Deposition (MOCVD)In combination with triethylamine and trimethylchlorosilane extends aldehydes to two carbons to enalsProvides scratch-resistance for glass bottles by pyrolytic coating at 500 °C