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Rubidium sulfate is a chemical compound that is composed of rubidium and sulfate ions. Rubidium sulfate is a white crystalline solid that can be obtained by reacting sodium carbonate with rubidium hydroxide in an aqueous solution. It has the formula RbSO4. This salt has a basic structure, which means it can form hydrogen bonds with other molecules. Rubidium sulfate is soluble in water and organic solvents, but insoluble in acids. Rubidium sulfate reacts with oxidizing agents such as potassium permanganate to produce oxygen gas and rubidium oxide. Rubidium sulfate also has optical properties, which means it will change color depending on the wavelength of light shone upon it. The most common optical property of rubidium sulfate is its absorption of infrared light.

<p>Copper oxychloride is a crystalline compound that is used as an agrochemical. It inhibits the growth of plants by inhibiting the synthesis of plant hormones, such as auxins and gibberellins. Copper oxychloride also has an inhibitory effect on enzymes in the shikimate pathway, which are necessary for the biosynthesis of aromatic amino acids. This compound may be used as a control agent to prevent unwanted plant growth or to control weeds. The effective dose varies depending on whether it is applied to soil or foliage and ranges from 0.5-2 kg/ha.</p>

<p>ALD Material<br>Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.<br>Tetramethyltin; Tetramethylstannane<br>ΔHcomb: 903.5 kcal/molΔHform, gas, 27 °: -13.6 kcal/mol ΔHvap: 6.8 kcal/molSn-Me bond dissociation energy: 227 kJ/molEa, pyrolysis: 41.1 kcal/molVapor pressure, -21 °C: 10 mmVapor pressure, 20 °C: 90 mmAllows synthesis of even numbered alkanesConverts acid chlorides to methyl ketones with benzylchlorobis(triphenyl phosphine)palladiumForms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphenylphosphine)nickelFor CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensorsPyrolyzed in vacuum to tin at 600-750 °CPyrolyzed oxidatively to SnO at 350-600 °CForms transparent conductive oxides for photovoltaics by Plasma-enhanced chemical vapor deposition (PECVD)Higher purity grade available, SNT7560.1<br></p>

<p>ALD Material<br>Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.<br>Tetrakis(dimethylamino)tin; Octamethylstannanetetraamine; Tin IV dimethylamide<br>Reacts with tris(aminoalkyl)amines, yielding azastannatranes<br></p>

<p>sec-Butylmagnesium chloride, lithium chloride complex 1.2M (15wt% ±1wt%) in tetrahydrofuran</p>

<p>Allylmagnesium bromide, 0.95-1.1 M in ether</p>

<p>n-Butylmagnesium chloride, 1.5-3.0 M in THF</p>

<p>Benzylmagnesium chloride, 1-2 M in THF</p>

<p>Ethylmagnesium chloride, 2M in ether</p>

<p>i-Propylmagnesium bromide, 2.9M (35wt% ±1wt%) in 2-methyltetrahydrofuran</p>

<p>i-Propylmagnesium chloride, 2-3M in ether</p>

<p>Methylmagnesium bromide, 3M in ether</p>

<p>Applications Chromium dioxide (CAS# 12018-01-8) is a useful research chemical compound.<br></p>