08-06-2555 - graphene-field-effect-transistor-gfet-chip-grid-pattern
Graphene Field-Effect Transistor (GFET) Chip - Quadrant pattern
CAS :Graphene Field-Effect Transistor (GFET) Chip - Quadrant pattern
Formule :CCouleur et forme :chipMasse moléculaire :12.0n-Tetracontane, 97% min
CAS :n-Tetracontane is used in a passivation layer in copper-phthalocyanine field-effect transistors for improving the charge carrier mobility and used to modify the quasi two-dimensional surface electron system on Au(111). This Thermo Scientific Chemicals brand product was originally part of the Alfa AFormule :C40H82Degré de pureté :97%Couleur et forme :White, SolidMasse moléculaire :563.10Hafnium(IV) oxide, 99% (metals basis excluding Zr), Zr <1.5%
CAS :Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi
Formule :HfO2Degré de pureté :1.5%Couleur et forme :White, PowderMasse moléculaire :210.49Hafnium(IV) oxide, Spectrographic Grade, 99.9% (metals basis excluding Zr), Zr typically <80ppm
CAS :Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi
Formule :HfO2Degré de pureté :99.9%Masse moléculaire :210.49Mercury(II) selenide, 99.999% (metals basis)
CAS :Mercury(II) selenide is used in semiconductors, infrared detectors, solar cells, transistors and amplifiers. It is also used as filters in some steel plants in order to remove mercury from exhaust gases. Further, it is used as an ohmic contact to wide-gap II-VI semiconductors such as zinc selenide oFormule :HgSeDegré de pureté :99.999%Masse moléculaire :279.55Gallium antimonide, 99.99% (metals basis)
CAS :Gallium antimonide can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems. It can be used as a component of photoresists and other composites where high refractive index is desirable This Thermo Scientific Chemicals brand product was originally p
Formule :GaSbDegré de pureté :99.99%Masse moléculaire :191.48Titanium silicide, 99.5% (metals basis)
CAS :Titanium silicide is used in the semiconductor industry. It is also used in the fabrication of transistors. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and label information may refer to the legacy brand. The original AlfFormule :Si2TiDegré de pureté :99.5%Masse moléculaire :104.07Molybdenum(IV) selenide, 99.9% (metals basis)
CAS :Molybdenum(IV) selenide is used in transistors and photodetectors. It is also used as a solid lubricant. Further, it is used in piezoelectric and solar cells. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and label informaFormule :MoSe2Degré de pureté :99.9%Couleur et forme :Dark gray, PowderMasse moléculaire :253.89Indium antimonide, 99.999% (metals basis)
CAS :Indium antimonide finds use in infrared detectors, including FLIR systems, thermal imaging cameras, infrared astronomy and in infrared homing missile guidance systems, in fast transistors. It is used in thermal image detectors using photo-electromagnetic detectors or photodiodes. This Thermo Scienti
Formule :InSbDegré de pureté :99.999%Masse moléculaire :236.57Hafnium(IV) oxide, 99.95%, (metals basis excluding Zr), Zr typically <0.5%
CAS :Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi
Formule :HfO2Degré de pureté :0.5%Masse moléculaire :210.49Nickel silicide, 99% (metals basis excluding Co), Co 0.1-1%
CAS :Ni silicides have been widely investigated for contact materials in microelectronic devices. Electroplating is another major use of the metal. nickel silicide/silicon nanowire heterostructures have been used to produce field-effect transistors. This Thermo Scientific Chemicals brand product was oriFormule :Ni2SiDegré de pureté :0.1-1%Masse moléculaire :145.47Germanium(IV) oxide, 99.99% (metals basis)
CAS :Used in phosphors, transistors and diodes, and infrared transmitting glass. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and label information may refer to the legacy brand. The original Alfa Aesar product / item code or SFormule :GeO2Degré de pureté :99.99%Masse moléculaire :104.63Iron(II) phthalocyanine, 96%
CAS :Iron phthalocyanine is been investigated as organic electroluminescence materials for the applications in organic solar cells, biosensitizers and display devices such as OLED(Organic Light Emiting Diode), OTFT(Organic Thin Film Transistor), Wearable Display, and e-paper. It is also used in the forFormule :C32H16FeN8Degré de pureté :96%Couleur et forme :Dark purple, crystalline powderMasse moléculaire :568.38Hafnium(IV) oxide, tech.
CAS :Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi
Formule :HfO2Masse moléculaire :210.49Copper sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.250in) thick, 99.995% (metals basis)
CAS :Sputtering targets commonly used to coat electronic components and electronic instruments. Due to its high electrical conductivity, copper is becoming increasingly popular for use in large-format, high-resolution TFT-LCD television sets. Copper is used as the electrode layer in thin-film transistorsFormule :CuDegré de pureté :99.995%Couleur et forme :Sputtering target, 50.8mm (2.0in) diameter x 6.35mm (0.250in) thick.Masse moléculaire :63.55Ruthenium(III) nitrosylacetate, Premion™, 99.99% (metals basis)
Ruthenium(III) nitrosyl acetate is used to fabricate oxide thin-film transistors. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and label information may refer to the legacy brand. The original Alfa Aesar product / item coFormule :Ru(NO)(OOCCH3)3Degré de pureté :99.99%Masse moléculaire :308.183,4,9,10-Perylenetetracarboxylic diimide
CAS :Used in chemical research. PTCDI is used extensively as an industrial pigment. It is used as tunable laser dye, light-harvesting material, transistor, molecular switched, solar cell, and optoelectronic device. Planar perylene- and naphthalene-based diimide linkers can be employed to tether the WatsFormule :C24H10N2O4Couleur et forme :Purple red, PowderMasse moléculaire :390.35Cadmium selenide, 99.999% (metals basis)
CAS :Cadmium selenide is applied in opto-electronic devices, laser diodes, biomedical imaging, nanosensing, high-efficiency solar cells and thin-film transistors. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and label informati
Formule :CdSeDegré de pureté :99.999%Masse moléculaire :191.39Hafnium(IV) oxide, 99.995%, (metals basis excluding Zr), Zr typically <0.2%
CAS :Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi
Formule :HfO2Degré de pureté :0.2%Masse moléculaire :210.49Gallium arsenide, 99.999% (metals basis)
CAS :Semiconductors (transistors, lasers, solar cells)Gallium arsenide is used in semiconductor applications. It is also used in the manufacture of devices such as microwave frequency integrated circuits, Gunn diodes, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodesFormule :AsGaDegré de pureté :99.999%Masse moléculaire :144.65
