Indium antimonide
CAS : 1312-41-0
Ref. 3D-BAA31241
| 5g | À demander | ||
| 10g | À demander | ||
| 25g | À demander | ||
| 50g | À demander | ||
| 100g | À demander |
Informations sur le produit
- Antimoniure d'indium
- Antimoniuro De Indio
- Indium Antimonide
- Indium antimonide (InSb)
- Indium compd. with antimony (1:1)
- Indium monoantimonide
- Indiumantimonid
Indium antimonide is a semiconductor material with the chemical symbol of InSb. It has a crystalline structure that consists of alternating layers of indium and arsenic atoms. The electrons in this material are excited by radiation, such as light or microwaves, to produce photons at wavelengths between 0.4 and 1.2 micrometers in wavelength. Indium antimonide has a high resistance to hydrogen fluoride and other corrosive gases because it is an unreactive metal-insulator-semiconductor material. Indium antimonide also emits light when exposed to water vapor or moisture in the air, which can be used as a test for humidity levels in the environment. The activation energies for electron excitation and recombination reactions in indium antimonide are approximately 10 eV, which makes it suitable for use in spectroscopic analysis of compounds involving light emission reactions. The synthesis pathway for indium antimonide involves boron nitride (BN) and lead
Propriétés chimiques
Question d’ordre technique sur : 3D-BAA31241 Indium antimonide
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