Indium(III) nitride
CAS : 25617-98-5
Ref. 3D-FI175692
| 1g | À demander | ||
| 2g | À demander | ||
| 5g | À demander | ||
| 250mg | À demander | ||
| 500mg | À demander |
Informations sur le produit
- Indium Nitride
- Indium mononitride
- Indiumnitrid
- Nitrure d'indium
- Nitruro De Indio
Indium nitride is a semiconductor with a wide bandgap and high thermal conductivity. It is chemically stable and has been shown to be reactive with respect to nitrogen gas. Indium nitride can be prepared by laser ablation of indium, followed by heating at high temperature in an inert atmosphere. Nitrogen atoms are introduced into the lattice of the material during the process. The process can be optimized for different purposes, such as structural analysis or model systems for studying electron-phonon interactions. Indium nitride has a thermal expansion coefficient that is lower than that of silicon and aluminum, making it ideal for use in nanoscale devices where small size is desired. Indium nitride also has optical properties that make it useful as a sensor for radiation, including X-rays, gamma rays, and infrared radiation.
Propriétés chimiques
Question d’ordre technique sur : 3D-FI175692 Indium(III) nitride
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