Bis(ethylcyclopentadienyl)nickel
CAS : 31886-51-8
Ref. 3D-GBA88651
| 1g | À demander | ||
| 5g | À demander | ||
| 10g | À demander | ||
| 25g | À demander | ||
| 500mg | À demander |
Informations sur le produit
The use of nickel-based materials in microelectronics is a well-known phenomenon. Nickel, being an active metal with a low melting point, is easily converted to the pure metal by thermal decomposition. It has been shown that nickel can form thin films at low temperatures and orientations, which are advantageous for semiconductor applications. Nickel can be deposited on substrates using various deposition techniques, such as chemical vapor deposition or sputtering. The reaction scheme of this process is very complex and includes many steps. This process has been studied extensively at both high and low temperatures for different substrates, including silicon carbide and silicon dioxide. The interaction between nickel and the substrate can be probed using kinetic measurements or graphical data, which helps predict how the film will behave when used in solar cells or other electronic devices.
Propriétés chimiques
Question d’ordre technique sur : 3D-GBA88651 Bis(ethylcyclopentadienyl)nickel
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