Informations sur le produit
- Digallium trisulfide
- Digallium trisulphide
- Gallium sesquisulfide
- Gallium sulfide (Ga2S3)
- Gallium sulfide (Ga<sub>2</sub>S<sub>3</sub>)
- Gallium trisulfide
- Gallium(3+) sulfide
- Thioxo-Thioxogallanylsulfanyl-Gallane
Gallium sulfide is a semiconductor with a wide band gap that can be used as an infrared detector in various applications, such as x-ray absorption and microscopy. Gallium sulfide crystals are grown by the process of liquid phase epitaxy, which is a technique that involves the use of chemicals to form thin films on the crystal surface. The growth rate is determined by the activation energy and the chemical stability of gallium sulfide. Gallium sulfide has been shown to have high values for activation energies, which aids in its use as a detector. It also has high values for x-ray absorption, which aids in its use as an infrared detector. Gallium sulfide can be made into particles by grinding it into powder or forming it into pellets. These particles are useful in optical devices such as laser diodes and LEDs.
Propriétés chimiques
Question d’ordre technique sur : 3D-MAA02422 Gallium(III) Sulfide
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