Informations sur le produit
- DCS
- Chlorosilane
- Dichlorolsilane
- Dichlorosilane [UN2189] [Poison gas]
- Dichlorosilane(SiH2Cl2)
- Dichlorosilane(SiH<sub>2</sub>Cl<sub>2</sub>)
- Dichlorosilicon
- Dichlorsilan
- Diclorosilano
- Silane, dichloro-
- Voir d'autres synonymes
- Silicon chloride hydride
- Silicon chloride hydride (Cl<sub>2</sub>H<sub>2</sub>Si)
- Silicon chloride hydride (SiCl2H2)
- Silicon chloride hydride (SiCl<sub>2</sub>H<sub>2</sub>)
- Silicon chloride hydride (SiH2Cl2)
- Silicon chloride hydride (SiH<sub>2</sub>Cl<sub>2</sub>)
- Un2189
Dialkyl Silane Reducing Agent
Organosilanes are hydrocarbon-like and possess the ability to serve as both ionic and free-radical reducing agents. These reagents and their reaction by-products are safer and more easily handled and disposed than many other reducing agents. The metallic nature of silicon and its low electronegativity relative to hydrogen lead to polarization of the Si-H bond yielding a hydridic hydrogen and a milder reducing agent compared to aluminum-, boron-, and other metal-based hydrides. A summary of some key silane reductions are presented in Table 1 of the Silicon-Based Reducing Agents brochure.
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Dichlorosilane; Silicomethylene chloride; Dihydridodichlorosilane
CAUTION: CAN FORM PYROPHORIC REACTION PRODUCTS ON CONTACT WITH WATER OR AMINESAIR TRANSPORT FORBIDDENVapor pressure, -34 °C: 100 mmVapor pressure, 20 °C: 1.62 atm (23.8 psia)ΔHform: -314 kJ/molΔHvap: 27.2 kJ/molDipole moment: 1.17 debyeSpecific heat: 1.122 J/g/°CCritical temperature: 176 °CCritical pressure: 46.1 atmFor epitaxial depositionUndergoes hydrosilylation reactionsGives improved yields in reduction of imines over that of trichlorosilaneAvailable as a solution in xylene, SID3368.6Extensive review of silicon based reducing agents: Larson, G.; Fry, J. L. "Ionic and Organometallic-Catalyzed Organosilane Reductions", Wipf, P., Ed.; Wiley, 2007
