Informations sur le produit
- HCDS
- 1,1,1,2,2,2-Hexachlorodisilane
- Disilane, 1,1,1,2,2,2-hexachloro-
- Disilane, hexachloro-
- Disilicon hexachloride
- Silicon chloride (Si<sub>2</sub>Cl<sub>6</sub>)
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Hexachlorodisilane; HCDS; Disilane hexachloride
CAUTION: HYDROLYSIS POLYMERS MAY IGNITE SPONTANEOUSLY, EVEN IN ABSENCE OF OXYGENΔHcomb: -733 kJ/molΔHform: -239 kJ/molΔHvap: 46.5 kJ/molVapor pressure, 40 °C: 12 mmCVD precursor for SiNConverts phosphine oxides to phosphines with inversion of configurationCatalyst for cyclotrimerization of acetylenesDeoxygenates amineoxides
