TETRACHLOROSILANE, 98%

CAS : 10026-04-7

Ref. 3H-SIT7085.0

Informations sur le produit

• Nom: TETRACHLOROSILANE, 98%
• Synonymes: SILICON TETRACHLORIDE
• Marque: Gelest
• Description: ALD MaterialAtomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.Tetrachlorosilane; Silicon chloride; Silicon tetrachlorideViscosity: 0.35 cStΔHform: -640 kJ/molΔHvap: 31.8 kJ/molΔHfus: 45.2 J/gSurface tension: 19.7 mN/mDielectric constant: 2.40Vapor pressure, 20 °C: 194 mmCritical pressure: 37.0 atmCritical temperature: 234 °CCoefficient of thermal expansion: 1.1 x 10-3Specific heat: 0.84 J/g/°Reaction with living alkali metal terminated polymers results in star polymersPrimary industrial use - combustion with hydrogen and air to give fumed silicaEnantioselectively opens stilbine epoxides to trichlorosilylated chlorohydrinsPromotes the reaction of aldehydes with isocyanides

Propriétés chimiques

• Masse moléculaire: 169.9
• Formule: Cl₄Sn
• Degré de pureté: 98%
• Couleur/Forme: Straw Liquid