CAS 12055-23-1
:Ossido di afnio
Descrizione:
Ossido di afnio, noto anche come hafnia, è un composto chimico con la formula HfO₂. È un solido cristallino bianco che mostra alta stabilità termica ed è insolubile in acqua. Ossido di afnio ha un alto punto di fusione ed è noto per le sue eccellenti proprietà dielettriche, rendendolo prezioso nell'industria elettronica, in particolare nella produzione di condensatori e come dielettrico di gate nei transistor. Il composto è anche caratterizzato dal suo alto indice di rifrazione ed è utilizzato nei rivestimenti ottici. Ossido di afnio può esistere in diverse forme cristalline, comprese le fasi monoclina, tetragonale e cubica, con la fase tetragonale stabile ad alte temperature. Inoltre, l'hafnia è chimicamente resistente e può resistere a ambienti difficili, il che la rende adatta per applicazioni in reattori nucleari e come rivestimento protettivo. Le sue proprietà uniche la rendono anche un candidato per l'uso in materiali avanzati e nanotecnologia. In generale, Ossido di afnio è un materiale versatile con significative applicazioni industriali e tecnologiche.
Formula:HfO2
InChI:InChI=1S/Hf.2O
InChI key:InChIKey=CJNBYAVZURUTKZ-UHFFFAOYSA-N
SMILES:[Hf](=O)=O
Sinonimi:- Dioxido De Hafnio
- Dioxohafnium
- Dioxyde d'hafnium
- Hafnia
- Hafnia (HfO2)
- Hafnia (HfO<sub>2</sub>)
- Hafnium (IV)�oxide (99.998%-Hf) PURATREM
- Hafnium dioxide
- Hafnium dioxide (HfO2)
- Hafnium dioxide (HfO<sub>2</sub>)
- Hafnium oxide
- Hafnium oxide (HfO2)
- Hafnium oxide (HfO<sub>2</sub>)
- Hafnium(+4) Cation
- Hafniumdioxid
- Hafniumoxideoffwhitepowder
- Hafniumoxidesinteredlumps
- Hafnotrast
- Hf 05
- Hf 05 (oxide)
- Nsc 158931
- Vedi altri sinonimi
Ordinare per
Purezza (%)
0
100
|
0
|
50
|
90
|
95
|
100
19 prodotti.
Hafnium(IV) oxide, 99.95%, (metals basis excluding Zr), Zr typically <0.5%
CAS:<p>Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi</p>Formula:HfO2Purezza:0.5%Peso molecolare:210.49Hafnium(IV) oxide, 99.9% (metals basis excluding Zr), Zr <0.5%
CAS:<p>Hafnium(IV) oxide is an intermediate. Hafnia is used in optical coatings, and as a high- dielectric in DRAM capacitors and in advanced metal-oxide-semiconductor devices. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and lab</p>Formula:HfO2Purezza:0.5%Peso molecolare:210.49Hafnium(IV) oxide, 99% (metals basis excluding Zr), Zr <1.5%
CAS:<p>Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi</p>Formula:HfO2Purezza:1.5%Colore e forma:White, PowderPeso molecolare:210.49Hafnium(IV) oxide, tech.
CAS:<p>Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi</p>Formula:HfO2Peso molecolare:210.49Hafnium(IV) oxide, Spectrographic Grade, 99.9% (metals basis excluding Zr), Zr typically <80ppm
CAS:<p>Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi</p>Formula:HfO2Purezza:99.9%Peso molecolare:210.49Hafnium(IV) oxide, 99.995%, (metals basis excluding Zr), Zr typically <0.2%
CAS:<p>Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory materi</p>Formula:HfO2Purezza:0.2%Peso molecolare:210.49Hafnium(IV) oxide, 99.99% (metals basis excluding Zr), Zr <100ppm
CAS:<p>Hafnium(IV) oxide is used as Intermediates, Paint additives and coating additives, metal Products. And it is also used in optical coatings, as a refractory material in the insulation of such devices as thermocouples. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesa</p>Formula:HfO2Purezza:99.99%Peso molecolare:210.49Hafnium(IV) oxide, 98%
CAS:<p>Hafnium(IV) oxide, 98%</p>Formula:HfO2Purezza:98%Colore e forma:off-white pwdr.Peso molecolare:210.49Hafnium(IV) oxide (99.995%-Hf, <0.15% Zr) PURATREM
CAS:<p>Hafnium(IV) oxide (99.995%-Hf, <0.15% Zr) PURATREM</p>Formula:HfO2Purezza:(99.995%-Hf, <0.15% Zr)Colore e forma:off-white pwdr.Peso molecolare:210.49Hafnium(IV) oxide
CAS:Hafnium(IV) oxidePurezza:99.99%,-200meshColore e forma:Off-White PowderPeso molecolare:210.49g/molHafnium(IV) oxide nanopowder, 70nm, 99.9%
CAS:Formula:HfO2Purezza:≥ 99.9%Colore e forma:White to tan powder or crystalPeso molecolare:210.49Hafnium oxide, 99+% (contains max. 4.5% Zr)
CAS:Formula:HfO2Purezza:≥ 99.0% (sum of Hf and Zr oxides after calcination)Colore e forma:White powderPeso molecolare:210.49Hafnium oxide, 99+% (contains max. 0.5% Zr)
CAS:Formula:HfO2Purezza:≥ 99.0%Colore e forma:White to off-white powder or crystalsPeso molecolare:210.49Hafnium oxide, 99.9%
CAS:Formula:HfO2Purezza:≥ 99.9% (excluding Zr)Colore e forma:White to off-white powderPeso molecolare:210.49Hafnium oxide, 99.9%
CAS:Formula:HfO2Purezza:≥ 99.9% (excluding Zr)Colore e forma:White powderPeso molecolare:210.49Ref: IN-DA00HFI1
Prodotto fuori produzione
