Metalli

Indium-99.999% is a trace metal that is used in nuclear medicine to detect bowel disease, such as Crohn's disease and ulcerative colitis. Indium-99.999% binds to nuclear DNA and cell nuclei, which can then be detected using x-ray diffraction data. The response element that is activated by this metal differs from other metals in the sense that it does not require the presence of oxygen for activation. This metal also has been used for autologous stem-cell transplantation and chelation therapy for infectious diseases, such as HIV/AIDS. Toxicity studies have shown no long-term toxicity or adverse effects on erythrocytes, leukocytes, the liver, kidney, or bone marrow at doses up to 100 mg/kg/day for up to 6 months.

<p>Zinc 2,9,16,23-tetra-tert-butyl-29H,31H-phthalocyanine is a molecule that has an ionization potential of 1.8 eV and a photovoltaic absorption spectrum with a peak at 528 nm. It has been used as a photoelectron emitter in photoelectron spectroscopy and as the emissive layer in solar cells. Zinc 2,9,16,23-tetra-tert-butyl-29H,31H-phthalocyanine is stable to water and air but can react with methyl esters or butyric acid. This molecule has been shown to be effective for use in solar cells due to its high optical absorption coefficient (0.1 cm2/g) and low band gap energy (1.5 eV).</p>

<p>ALD Material<br>Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.<br>Tetramethyltin; Tetramethylstannane<br>ΔHcomb: 903.5 kcal/molΔHform, gas, 27 °: -13.6 kcal/mol ΔHvap: 6.8 kcal/molSn-Me bond dissociation energy: 227 kJ/molEa, pyrolysis: 41.1 kcal/molVapor pressure, -21 °C: 10 mmVapor pressure, 20 °C: 90 mmAllows synthesis of even numbered alkanesConverts acid chlorides to methyl ketones with benzylchlorobis(triphenyl phosphine)palladiumForms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphenylphosphine)nickelFor CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensorsPyrolyzed in vacuum to tin at 600-750 °CPyrolyzed oxidatively to SnO at 350-600 °CForms transparent conductive oxides for photovoltaics by Plasma-enhanced chemical vapor deposition (PECVD)Higher purity grade available, SNT7560.1<br></p>

<p>ALD Material<br>Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.<br>Tetrakis(dimethylamino)tin; Octamethylstannanetetraamine; Tin IV dimethylamide<br>Reacts with tris(aminoalkyl)amines, yielding azastannatranes<br></p>

<p>Benzylmagnesium chloride, 1-2 M in THF</p>

<p>sec-Butylmagnesium chloride, lithium chloride complex 1.2M (15wt% ±1wt%) in tetrahydrofuran</p>

<p>n-Butylmagnesium chloride, 1.5-3.0 M in THF</p>

<p>Ethylmagnesium chloride, 2M in ether</p>

<p>i-Propylmagnesium bromide, 2.9M (35wt% ±1wt%) in 2-methyltetrahydrofuran</p>

<p>Allylmagnesium bromide, 0.95-1.1 M in ether</p>

<p>Methylmagnesium bromide, 3M in ether</p>

<p>i-Propylmagnesium chloride, 2-3M in ether</p>

<p>Applications Chromium dioxide (CAS# 12018-01-8) is a useful research chemical compound.<br></p>