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COPPER(I)/(II) HEXAFLUORO-2,4-PENTANEDIONATE - VINYLTRIMETHYLSILANE COMPLEX
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COPPER(I)/(II) HEXAFLUORO-2,4-PENTANEDIONATE - VINYLTRIMETHYLSILANE COMPLEX

CAS: 139566-53-3 14781-45-4

Ref. 3H-AKC252.8

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Estimated delivery in United States, on Tuesday 23 Apr 2024

Product Information

Name:
COPPER(I)/(II) HEXAFLUORO-2,4-PENTANEDIONATE - VINYLTRIMETHYLSILANE COMPLEX
Description:

ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Copper(I)/(I) hexafluoro-2,4-pentanedionate-vinyltrimethylsilane complex; Copper HFAC VTMS
10-20% Copper(II)High deposition rate, stable, optimized precursor for copper

Brand:
Gelest
Long term storage:
Notes:

Chemical properties

Molecular weight:
370.84
Formula:
C10H13CuF6O2Si
Purity:
10-20% Copper (II)
Color/Form:
Green Liquid
MDL:
Melting point:
Boiling point:
Flash point:
Density:
Concentration:
EINECS:
Merck:
HS code:

Hazard Info

UN Number:
EQ:
Class:
H Statements:
P Statements:
Forbidden to fly:
Hazard Info:
Packing Group:
LQ:

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