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Hafnium Tetrakis(Ethylmethylamide)
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Hafnium Tetrakis(Ethylmethylamide)

CAS: 19824-55-6 352535-01-4

Ref. 3H-OMHF083

Estimated delivery in United States, on Thursday 11 Feb 2021

Product Information

Hafnium Tetrakis(Ethylmethylamide)

ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Hafnium tetrakis(ethylmethylamide); Tetrakis(ethylmethylamido)hafnium
ALD process window: 150-225 CHigh purity grade available, OMHF083.1

Long term storage:

Chemical properties

Molecular weight:
Yellow Amber Liquid
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Hazard Info

UN Number:
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Forbidden to fly:
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