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TETRAIODOSILANE
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TETRAIODOSILANE

CAS: 13465-84-4

Ref. 3H-SIT7123.0

50gTo inquire
Estimated delivery in United States, on Tuesday 23 Apr 2024

Product Information

Name:
TETRAIODOSILANE
Synonyms:
  • Silane, tetraiodo-
  • Silicon iodide (SiI<sub>4</sub>)
  • Silicon tetraiodide
  • Siliconiodidemetalsbasisoffwhitepowder
  • Tetraiodosilane
Description:

ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Tetraiodosilane; Silicon tetraiodide; Silicon iodide
?Hform: -189.5 kJ/mol?Hfus: -29 kJ/molUV absorption max: 284 nmMay be reduced to silicon metalReacts with NH3 <500 °C to form SiNCan be ignited in air forming SiO2

Brand:
Gelest
Long term storage:
Notes:

Chemical properties

Molecular weight:
535.7
Formula:
I4Si
Color/Form:
Off-White To Pink/Purple Solid
MDL:
Melting point:
Boiling point:
Flash point:
Density:
Concentration:
EINECS:
Merck:
HS code:

Hazard Info

UN Number:
EQ:
Class:
H Statements:
P Statements:
Forbidden to fly:
Hazard Info:
Packing Group:
LQ:

Technical inquiry about: 3H-SIT7123.0 TETRAIODOSILANE

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