Metales

Rubidium sulfate is a chemical compound that is composed of rubidium and sulfate ions. Rubidium sulfate is a white crystalline solid that can be obtained by reacting sodium carbonate with rubidium hydroxide in an aqueous solution. It has the formula RbSO4. This salt has a basic structure, which means it can form hydrogen bonds with other molecules. Rubidium sulfate is soluble in water and organic solvents, but insoluble in acids. Rubidium sulfate reacts with oxidizing agents such as potassium permanganate to produce oxygen gas and rubidium oxide. Rubidium sulfate also has optical properties, which means it will change color depending on the wavelength of light shone upon it. The most common optical property of rubidium sulfate is its absorption of infrared light.

Iron(III) 2-ethylhexanoate is a ferric salt that is used as an acid catalyst for the synthesis of ethyl esters. It also acts as an oxidant and can be used in organic chemistry as a chemical reagent to produce ethyl esters from carboxylic acids. Iron(III) 2-ethylhexanoate reacts with iron oxide particles to form ferric hydroxide, which is then purified by calcium carbonate. This compound also has potential applications in nanotechnology, where it has been shown to be able to act as a catalyst for the synthesis of nanowires. The adsorption kinetics of this compound have been studied using various solvents and metal hydroxides, showing that the rate of adsorption depends on the type of solvent and metal hydroxide used. Iron(III) 2-ethylhexanoate is synthesized by reacting ethyl linoleate with iron oxide particles and calcium stearate

<p>ALD Material<br>Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.<br>Tetrakis(dimethylamino)tin; Octamethylstannanetetraamine; Tin IV dimethylamide<br>Reacts with tris(aminoalkyl)amines, yielding azastannatranes<br></p>

<p>ALD Material<br>Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.<br>Tetramethyltin; Tetramethylstannane<br>ΔHcomb: 903.5 kcal/molΔHform, gas, 27 °: -13.6 kcal/mol ΔHvap: 6.8 kcal/molSn-Me bond dissociation energy: 227 kJ/molEa, pyrolysis: 41.1 kcal/molVapor pressure, -21 °C: 10 mmVapor pressure, 20 °C: 90 mmAllows synthesis of even numbered alkanesConverts acid chlorides to methyl ketones with benzylchlorobis(triphenyl phosphine)palladiumForms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphenylphosphine)nickelFor CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensorsPyrolyzed in vacuum to tin at 600-750 °CPyrolyzed oxidatively to SnO at 350-600 °CForms transparent conductive oxides for photovoltaics by Plasma-enhanced chemical vapor deposition (PECVD)Higher purity grade available, SNT7560.1<br></p>

<p>sec-Butylmagnesium chloride, lithium chloride complex 1.2M (15wt% ±1wt%) in tetrahydrofuran</p>

<p>Benzylmagnesium chloride, 1-2 M in THF</p>

<p>i-Propylmagnesium bromide, 2.9M (35wt% ±1wt%) in 2-methyltetrahydrofuran</p>

<p>n-Butylmagnesium chloride, 1.5-3.0 M in THF</p>

<p>Ethylmagnesium chloride, 2M in ether</p>

<p>Allylmagnesium bromide, 0.95-1.1 M in ether</p>

<p>i-Propylmagnesium chloride, 2-3M in ether</p>

<p>Methylmagnesium bromide, 3M in ether</p>

<p>Applications Chromium dioxide (CAS# 12018-01-8) is a useful research chemical compound.<br></p>