CAS 1645286-75-4

AZ6102

CAS : 1645286-75-4

2-(4-(6-(cis-3,5-Dimethylpiperazin-1-yl)-4-methylpyridin-3-yl)phenyl)-7-methyl-3H-pyrrolo[2,3-d]pyrimidin-4(7H)-one

Formule : C₂₅H₂₈N₆O

Degré de pureté : 98%

Masse moléculaire : 428.53

Ref: IN-DG630417

4H-Pyrrolo[2,3-d]pyrimidin-4-one, 2-[4-[6-[(3R,5S)-3,5-dimethyl-1-piperazinyl]-4-methyl-3-pyridinyl]phenyl]-3,7-dihydro-7-methyl-, rel-

CAS : 1645286-75-4

Formule : C₂₅H₂₈N₆O

Degré de pureté : 98%

Couleur et forme : Solid

Masse moléculaire : 428.5294

Ref: IN-DA001UXI

AZ6102

CAS : 1645286-75-4

AZ6102

Formule : C₂₅H₂₈N₆O

Degré de pureté : ≥95%

Masse moléculaire : 428.53

Ref: 54-BUP05876

AZ6102

CAS : 1645286-75-4

AZ6102: Potent TNKS1/2 inhibitor, 100x selective over PARPs, IC50 = 5 nM in DLD-1 Wnt pathway.

Formule : C₂₅H₂₈N₆O

Degré de pureté : 97.98% - 99.91%

Couleur et forme : Solid

Masse moléculaire : 428.53

Ref: TM-T6768

AZ 6102

CAS : 1645286-75-4

AZ 6102 is a photoresist, typically utilized in the photolithography process. It is a chemically synthesized material, tailored for the precise patterning required in microfabrication. Its mode of action involves a photosensitive chemical composition that undergoes a structural change upon exposure to specific wavelengths of light, often ultraviolet. This change in molecular structure allows the exposed areas to be selectively dissolved by a developer solution, while the unexposed areas remain intact.

Formule : C₂₅H₂₈N₆O

Degré de pureté : Min. 95%

Masse moléculaire : 428.53 g/mol

Ref: 3D-VQC28675