Metais

Copper peptide (GHK-Cu), also known as liver cell growth factor, is the naturally occurring tripeptide glycyl-L-histidyl-L-lysine in a complex with copper (II), for which it has a strong affinity. GHK-Cu is found in human plasma, where it is thought to promote a range of beneficial effects, including wound healing, antioxidant and anti-inflammatory. In skin fibroblasts GHK-Cu promotes collagen production, glycosaminoglycan synthesis and blood vessels growth. GHK-Cu has found a use in the cosmetics industry, where its collagen production stimulating effect is used in anti-aging/reparative skin creams. GHK-Cu also exhibits therapeutic effect on hair loss.

<p>Zinc 2,9,16,23-tetra-tert-butyl-29H,31H-phthalocyanine is a molecule that has an ionization potential of 1.8 eV and a photovoltaic absorption spectrum with a peak at 528 nm. It has been used as a photoelectron emitter in photoelectron spectroscopy and as the emissive layer in solar cells. Zinc 2,9,16,23-tetra-tert-butyl-29H,31H-phthalocyanine is stable to water and air but can react with methyl esters or butyric acid. This molecule has been shown to be effective for use in solar cells due to its high optical absorption coefficient (0.1 cm2/g) and low band gap energy (1.5 eV).</p>

<p>ALD Material<br>Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.<br>Tetrakis(dimethylamino)tin; Octamethylstannanetetraamine; Tin IV dimethylamide<br>Reacts with tris(aminoalkyl)amines, yielding azastannatranes<br></p>

<p>ALD Material<br>Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.<br>Tetramethyltin; Tetramethylstannane<br>ΔHcomb: 903.5 kcal/molΔHform, gas, 27 °: -13.6 kcal/mol ΔHvap: 6.8 kcal/molSn-Me bond dissociation energy: 227 kJ/molEa, pyrolysis: 41.1 kcal/molVapor pressure, -21 °C: 10 mmVapor pressure, 20 °C: 90 mmAllows synthesis of even numbered alkanesConverts acid chlorides to methyl ketones with benzylchlorobis(triphenyl phosphine)palladiumForms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphenylphosphine)nickelFor CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensorsPyrolyzed in vacuum to tin at 600-750 °CPyrolyzed oxidatively to SnO at 350-600 °CForms transparent conductive oxides for photovoltaics by Plasma-enhanced chemical vapor deposition (PECVD)Higher purity grade available, SNT7560.1<br></p>

<p>Allylmagnesium bromide, 0.95-1.1 M in ether</p>

<p>Ethylmagnesium chloride, 2M in ether</p>

<p>n-Butylmagnesium chloride, 1.5-3.0 M in THF</p>

<p>sec-Butylmagnesium chloride, lithium chloride complex 1.2M (15wt% ±1wt%) in tetrahydrofuran</p>

<p>Benzylmagnesium chloride, 1-2 M in THF</p>

<p>i-Propylmagnesium bromide, 2.9M (35wt% ±1wt%) in 2-methyltetrahydrofuran</p>

<p>i-Propylmagnesium chloride, 2-3M in ether</p>

<p>Methylmagnesium bromide, 3M in ether</p>

<p>Applications Chromium dioxide (CAS# 12018-01-8) is a useful research chemical compound.<br></p>