Informação sobre produto
- Orgatix ZB 126
- Tetrachlorozirconium
- Tetrachlorure de zirconium
- Tetracloruro De Circonio
- Zirconium (Iv) Chloride
- Zirconium chloride
- Zirconium chloride (Zr2Cl8)
- Zirconium chloride (Zr<sub>2</sub>Cl<sub>8</sub>)
- Zirconium chloride (ZrCl4)
- Zirconium chloride (ZrCl4), (T-4)-
- Ver mais sinónimos
- Zirconium chloride (ZrCl4), tetrahydrate, (T-4)-
- Zirconium chloride (ZrCl<sub>4</sub>)
- Zirconium chloride (ZrCl<sub>4</sub>), (T-4)-
- Zirconium(4+) tetrachloride
- Zirconiumtetrachlorid
- ZrCl4
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Zirconium tetrachloride; Tetrachlorozirconium; Zirconium(IV) chloride, anhydrous
ΔHsub: 100 kcal/molVapor pressure, 190 °C: 1 mm
Propriedades químicas
Consulta técnica sobre: 3H-INZR065 ZIRCONIUM TETRACHLORIDE, 99+%
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