Informação sobre produto
- N-bis(dimethylamino)stibanyl-N-methyl-methanamine
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Tris(dimethylamino)antimony; Amtimonytris(dimethylamide)
Vapor pressure, 30 °C: 0.5 mmAlkylated by aluminum alkyls and Grignards to form R3Sb
Propriedades químicas
Consulta técnica sobre: 3H-OMAN080 TRIS(DIMETHYLAMINO)ANTIMONY
Se desejar solicitar um orçamento ou fazer uma encomenda, por favor, adicione os produtos ao seu carrinho e depois solicite um orçamento ou encomenda a partir do carrinho. É mais rápido, mais barato e poderá beneficiar-se dos descontos e outras vantagens disponíveis.
