Informação sobre produto
Nome:
BIS(TRIMETHYLSILYL)TELLURIDE
Sinónimos:
- HEXAMETHYLDISILATELLURANE
- 1,1,1,3,3,3-Hexamethyldisilatellurane
- Bis(trimethylsilyl) telluride
- Bis(trimethylsilyl)tellurium
- Disilatellurane, 1,1,1,3,3,3-hexamethyl-
- Disilatellurane, hexamethyl-
- Disiltellurane, hexamethyl-
- Silane, tellurobis[trimethyl-
- Tellurium, bis(trimethylsilyl)-
Descrição:
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Bis(trimethylsilyl)telluride; Hexamethyldisilatellurane
Intermediate for CdTe quantum dots
Aviso:
Os nossos productos estão destinados exclusivamente para uso em laboratório. Para qualquer outra aplicação, por favor entre em contacto.
Marca:
Gelest
Armazenamento a longo prazo:
Notas:
Propriedades químicas
Peso molecular:
273.98
Fórmula:
C6H18Si2Te
Cor/forma:
Deep Straw To Amber Liquid
MDL:
Ponto de fusão:
Ponto de ebulição:
Ponto de inflamação:
Densidade:
Concentração:
EINECS:
Merck:
Código HS:
