OCTAMETHYLCYCLOTETRASILOXANE, 98%

CAS: 556-67-2

Ref. 3H-SIO6700.0

Informação sobre produto

• Nome: OCTAMETHYLCYCLOTETRASILOXANE, 98%
• Sinónimos: D4
• Marca: Gelest

Descrição

ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Octamethylcyclotetrasiloxane; D4; Cyclic tetramer; Cyclomethicone; Cyclohexasiloxane; Cyclotetrasiloxane; OMCTS
Viscosity: 2.3 cStΔHfus: 18.4 kJ/molΔHvap: 45.6 kJ/molDipole moment: 1.09 debyeVapor pressure, 23 °C: 1 mmDielectric constant: 2.39Ring strain: 1.00 kJ/molSurface tension, 20 °C: 17.9 mN/mCritical temperature: 314 °CCritical pressure: 1.03 mPaSpecific heat: 502 J/g/°Coefficient of thermal expansion: 0.8 x 10-3Cryoscopic constant: 11.2Henry’s law constant, Hc: 3.4 ± 1.7Ea, polym: 79 kJ/molOctanol/water partition coefficient, log Kow: 5.1Basic building block for silicones by ring-opening polymerizationSolubility, water: 50 ?g/l

Propriedades químicas

• Peso molecular: 296.61
• Fórmula: C₈H₂₄O₄Si₄
• Pureza: 98%
• Cor/forma: Colourless Liquid