1,1,3,3-TETRAMETHYLDISILAZANE

CAS: 15933-59-2

Ref. 3H-SIT7542.0

Informação sobre produto

• Nome: 1,1,3,3-TETRAMETHYLDISILAZANE
• Sinónimos: 1,1,3,3-Tetramethyldisilazane, 1,1,3,3-Tetramethyldisilazane-1,3-Diyl, 1,3-Dihydrido-1,1,3,3-tetramethyldisilazane, Bis(dimethylsilyl)amine, Disilazane, 1,1,3,3-tetramethyl-, Ls 7050, N,1,1,1-tetramethyl-N-silylsilanamine, N-(dimethylsilyl)-1,1-dimethylsilanamine, Nsc 139849, Silanamine, N-(dimethylsilyl)-1,1-dimethyl-, Tetramethyldisilazane, [(Dimethylsilylamino)-methylsilyl]methane
• CAS: 15933-59-2

Descrição

ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
1,1,3,3-Tetramethyldisilazane; Bis(dimethylsilyl)amine; TMDS; TMDZ
Forms dimethylsilyl ethers with greater volatility than trimethylsilyl ethersConverts unsaturated alcohols to diolsConverts homopropargylic alcohols to ?-hydroxy ketones in a three-step processEmployed in the silylation/hydrosilylation of allylic alcohols leading to useful cyclic alkoxysilane intermediates

• Marca: Gelest

Propriedades químicas

• Peso molecular: 133.34
• Fórmula: C₄H₁₅NSi₂
• Pureza: 97%
• Cor/forma: Liquid