Product correctly added to cart.

discount label
COPPER(II) HEXAFLUORO-2,4-PENTANEDIONATE, dihydrate
View 3D

Gelest logo

COPPER(II) HEXAFLUORO-2,4-PENTANEDIONATE, dihydrate

CAS: 14781-45-4

Ref. 3H-AKC253

2kgTo inquire
50gTo inquire
Estimated delivery in United States, on Wednesday 29 May 2024

Product Information

Name:
COPPER(II) HEXAFLUORO-2,4-PENTANEDIONATE, dihydrate
Synonyms:
  • (E)-1,1,1,5,5,5-hexafluoro-4-oxo-pent-2-en-2-olate
  • (SP-4-1)-Bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato-κO<sup>2</sup>,κO<sup>4</sup>)copper
  • 2,4-Pentanedione, 1,1,1,5,5,5-hexafluoro-, copper deriv.
  • Bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)copper (II)
  • Bis(1,1,1,5,5,5-hexafluoroacetylacetonato)copper(II)
  • Bis(hexafluoroacetoacetonato)copper(II)
  • Bis(hexafluoroacetylacetonate)copper(II)
  • Bis(hexafluoroacetylacetonato)copper
  • Bis(hexafluoroacetylacetonato)copper(II)
  • Bis(hexafluroroacetylacetonato)copper
  • See more synonyms
  • Copper hexafluoroacetylacetonate
  • Copper(II) bis(hexafluoroacetylacetonate)
  • Copper(II) hexafluoroacetylacetonate
  • Copper(II) hexafluoroacetylacetonate hydrate
  • Copper(Ii) Hexafluoro-2,4-Pentanedionate
  • Copper, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)-
  • Copper, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato-O,O′)-, (SP-4-1)-
  • Copper, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato-κO,κO′)-, (SP-4-1)-
  • Copper, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato-κO<sup>2</sup>,κO<sup>4</sup>)-, (SP-4-1)-
  • bis[(Z)-4,4,4-trifluoro-3-oxo-1-(trifluoromethyl)but-1-enoxy]copper hydrate
  • copper(2+) bis[(2Z)-1,1,1,5,5,5-hexafluoro-4-oxopent-2-en-2-olate]
  • copper,(Z)-1,1,1,5,5,5-hexafluoro-4-oxo-pent-2-en-2-olate
Description:

ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Copper (II) hexafluoro-2,4-pentanedionate, dihydrate; Cupric hexafluoroacetylacetonate
Vapor pressure, 50 °C: 1 mmVapor pressure, 95 °C: 10 mmSolubility, methanol: >200 g/LSoluble: methanol, acetone, tolueneEmployed in CVD of superconductorsCatalyst for addition of diazopentanediones to aldehydes and ketones to form dioxolesCu thin films deposited with H2 at 250 °CForms ferromagnetic chains on photolysis with diazodi-4-pyridylmethane

Brand:
Gelest
Long term storage:
Notes:

Chemical properties

Molecular weight:
477.64/513.68
Formula:
C10H2CuF12O4·2H2O
Color/Form:
Blue-Green Solid
MDL:
Melting point:
Boiling point:
Flash point:
Density:
Concentration:
EINECS:
Merck:
HS code:

Hazard Info

UN Number:
EQ:
Class:
H Statements:
P Statements:
Forbidden to fly:
Hazard Info:
Packing Group:
LQ:

Technical inquiry about: 3H-AKC253 COPPER(II) HEXAFLUORO-2,4-PENTANEDIONATE, dihydrate

Please use instead the cart to request a quotation or an order

If you want to request a quotation or place an order, please instead add the desired products to your cart and then request a quotation or order from the cart. It is faster, cheaper, and you will be able to benefit from the available discounts and other advantages.

* Mandatory fields.
Welcome to CymitQuimica!We use cookies to enhance your visit. We do not include advertising.

Please see our Cookies Policy for more details or adjust your preferences in "Settings".