Product Information
- (T-4)-Tricarbonylnitrosylcobalt
- Cobalt carbonyl nitrosyl (Co(CO)<sub>3</sub>(NO))
- Cobalt tricarbonyl mononitrosyl
- Cobalt, nitrosyltricarbonyl-
- Cobalt, tricarbonylnitrosyl-
- Cobalt, tricarbonylnitrosyl-, (T-4)-
- Nitrosylcobalt tricarbonyl
- Nitrosyltricarbonylcobalt
- Tricarbonylnitrosylcobalt
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Cobalt tricarbonyl nitrosyl; Dicobalt octacarbonyl
Red-brown liquidIonization energy: 8.3 eVVapor pressure, 20 °C" 100 mmSpecific gravity: 1.47In combination with SiH4 forms CoSi by CVDCatalyst for conversion of olefins, alkynes and CO to cyclopentenonesReagent for mediated epitaxy cobaltDeposition of cobalt for magnetic thin filmsIn combination with Fe(CO)5 forms spherical Fe/Co particlesForming electrical contacts on transistor source/drain and gate regionsOptimize processing Co epitaxy growth in integrated silicide circuits
Chemical properties
Technical inquiry about: 3H-INCO032 COBALT TRICARBONYL NITROSYL
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