Product Information
Name:
BIS(TRIMETHYLSILYL)TELLURIDE
Synonyms:
- HEXAMETHYLDISILATELLURANE
- 1,1,1,3,3,3-Hexamethyldisilatellurane
- Bis(trimethylsilyl) telluride
- Bis(trimethylsilyl)tellurium
- Disilatellurane, 1,1,1,3,3,3-hexamethyl-
- Disilatellurane, hexamethyl-
- Disiltellurane, hexamethyl-
- Silane, tellurobis[trimethyl-
- Tellurium, bis(trimethylsilyl)-
Description:
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Bis(trimethylsilyl)telluride; Hexamethyldisilatellurane
Intermediate for CdTe quantum dots
Notice:
Our products are intended for lab use only. For any other use, please contact us.
Brand:
Gelest
Long term storage:
Notes:
Chemical properties
Molecular weight:
273.98
Formula:
C6H18Si2Te
Color/Form:
Deep Straw To Amber Liquid
MDL:
Melting point:
Boiling point:
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Merck:
HS code:
