Product Information
- BIS(tert-BUTYLAMINO)SILANE
- Bis(tert-butylamino)silane
- Btbas
- Di(t-butylamino)silane
- N,N'-di-tert-butylsilanediamine
- N,N′-Bis(1,1-dimethylethyl)silanediamine
- N,N′-Bis-tert-butylsilanediamine
- Silanediamine, N,N′-bis(1,1-dimethylethyl)-
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Di(t-butylamino)silane; Bis(tert-butylamino)silane; N,N'-Di-t-butylsilanediamine; BTBAS
Lithiation leads to polyhedral silazanes
Chemical properties
Technical inquiry about: 3H-SID2795.0 DI(t-BUTYLAMINO)SILANE
If you want to request a quotation or place an order, please instead add the desired products to your cart and then request a quotation or order from the cart. It is faster, cheaper, and you will be able to benefit from the available discounts and other advantages.
