CAS 12005-69-5
:Boron arsenide (BAs)
Description:
Boron arsenide (BAs) is a binary compound composed of boron and arsenic, notable for its semiconductor properties. It typically crystallizes in a zinc blende structure, which contributes to its electronic characteristics. BAs exhibits a direct bandgap, making it suitable for optoelectronic applications, particularly in the infrared spectrum. The material is characterized by its high thermal stability and resistance to oxidation, which enhances its utility in high-temperature environments. Additionally, boron arsenide has a relatively high thermal conductivity, making it an attractive candidate for heat dissipation applications in electronic devices. Its unique combination of properties allows for potential uses in advanced electronic and photonic devices, including transistors and lasers. However, handling BAs requires caution due to the toxicity of arsenic, necessitating appropriate safety measures in both research and industrial settings. Overall, boron arsenide is a significant material in the field of semiconductor technology, with ongoing research exploring its capabilities and applications.
Formula:AsB
InChI:InChI=1S/AsB/c1-2
InChI key:InChIKey=DBKNIEBLJMAJHX-UHFFFAOYSA-N
SMILES:[As]#B
Synonyms:- Arsenic boride (BAs)
- Boron monoarsenide
- Boron arsenide (BAs)
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