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CAS 12024-14-5

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Gallium telluride (GaTe)

Description:
Gallium telluride (GaTe) is a binary compound composed of gallium and tellurium, notable for its semiconductor properties. It typically crystallizes in a layered structure, which contributes to its anisotropic electrical and optical characteristics. GaTe exhibits a direct bandgap, making it suitable for applications in optoelectronics, such as photodetectors and light-emitting devices. The material is also characterized by its high thermal stability and relatively low melting point compared to other semiconductors. GaTe can be synthesized through various methods, including chemical vapor transport and solid-state reactions. Its electrical conductivity can be modified through doping, allowing for tailored electronic properties. Additionally, GaTe has shown promise in the field of two-dimensional materials, with potential applications in flexible electronics and advanced photonic devices. However, handling GaTe requires caution due to the toxicity of tellurium and the need for appropriate safety measures in laboratory settings. Overall, gallium telluride is a significant material in the realm of modern semiconductor technology.
Formula:GaTe
InChI:InChI=1/Ga.Te.H/q+2;-2;/rGaH.Te/h1H;/q+2;-2
InChI key:InChIKey=OFIYHXOOOISSDN-UHFFFAOYSA-N
SMILES:[Ga]=[Te]
Synonyms:
  • $L^{1}-Tellane
  • $L^{2}-Gallane
  • Gallium monotelluride
  • Gallium monotelluride (GaTe)
  • Gallium telluride (Ga<sub>2</sub>Te<sub>2</sub>)
  • Gallium telluride (GaTe)
  • Gallium(+2) Monohydride Cation
  • Gallium(II) telluride
  • Tellurium(-2) Anion
  • Gallium telluride (Ga2Te2)
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