Description:Germanium telluride (GeTe) is a binary compound composed of germanium and tellurium, notable for its semiconductor properties. It typically appears as a grayish or black crystalline solid and exhibits a diamond cubic crystal structure. GeTe is characterized by its high thermal stability and relatively low melting point, making it suitable for various applications in electronics and thermoelectric devices. The material has a direct bandgap, which allows it to efficiently absorb and emit light, making it useful in optoelectronic applications. Additionally, GeTe undergoes a phase change from a crystalline to an amorphous state, which is exploited in data storage technologies. Its thermoelectric efficiency is enhanced by its ability to maintain a low thermal conductivity while allowing electrical conduction, making it a candidate for energy conversion applications. GeTe is also studied for its potential in topological insulators and other advanced materials research. However, handling precautions are necessary due to the toxicity of tellurium.
We use cookies to enhance your visit. We do not include advertising.
Please see our Cookies Policy for more details or adjust your preferences in "Settings".
This is the advanced settings system for our own and third-party cookies. Here you can modify parameters that will directly affect your browsing experience on this website. If you wish you may check the list of Cookie types.
Please note that disabling cookies can cause failures in the normal operation of the web.
