Germanium nitride (Ge3N4) is a binary compound composed of germanium and nitrogen, characterized by its semiconductor properties and potential applications in electronics and optoelectronics. It typically appears as a dark brown or black powder and exhibits a high thermal stability, making it suitable for high-temperature applications. Germanium nitride is known for its wide bandgap, which allows it to function effectively in various electronic devices. The compound is also notable for its hardness and mechanical strength, which can be advantageous in protective coatings. Additionally, germanium nitride can be synthesized through various methods, including chemical vapor deposition and solid-state reactions. Its reactivity with moisture and air necessitates careful handling and storage to prevent degradation. Overall, germanium nitride is a material of interest in advanced technological applications, particularly in the fields of semiconductors and materials science.

Germanium nitride (Ge3N4) does not occur in nature as a compound. It can be produced by reacting germanium with ammonia. It can be applied as a passivation layers to germanium-based radiation detectors. Germanium Nitride is reported to be used as a water-insoluble gate dielectric film in metal oxide semiconductor field effect transistor with germanium channel.
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It is used in etchant formulation, which was originally developed for silicon oxynitride.
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Germanium nitride

12065-36-0: Germanium nitride (Ge3N4) is a binary compound composed of germanium and nitrogen, characterized by its semiconductor properties and potential applications in electronics and optoelectronics. It typically appears as a dark brown or black powder and exhibits a high thermal stability, making it suitable for high-temperature applications. Germanium nitride is known for its wide bandgap, which allows it to function effectively in various electronic devices. The compound is also notable for its hardness and mechanical strength, which can be advantageous in protective coatings. Additionally, germanium nitride can be synthesized through various methods, including chemical vapor deposition and solid-state reactions. Its reactivity with moisture and air necessitates careful handling and storage to prevent degradation. Overall, germanium nitride is a material of interest in advanced technological applications, particularly in the fields of semiconductors and materials science.

CAS 12065-36-0

Germanium nitride