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CAS 1303-00-0

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Gallium arsenide

Description:
Gallium arsenide (GaAs) is a compound semiconductor known for its unique electronic and optical properties. It is composed of gallium and arsenic in a 1:1 ratio and is primarily used in high-frequency and optoelectronic applications, such as in the production of light-emitting diodes (LEDs), laser diodes, and solar cells. GaAs has a direct bandgap, which allows it to efficiently emit light, making it ideal for photonic devices. It exhibits high electron mobility, which contributes to its effectiveness in high-speed electronic devices. The material is also characterized by its relatively high thermal stability and resistance to radiation, making it suitable for space applications. However, GaAs is more expensive to produce compared to silicon, which limits its use in some applications. Additionally, handling GaAs requires caution due to the toxicity of arsenic, necessitating appropriate safety measures in its production and use. Overall, gallium arsenide plays a crucial role in modern electronics and photonics, offering advantages in performance and efficiency.
Formula:AsGa
InChI:InChI=1S/As.Ga
InChI key:InChIKey=JBRZTFJDHDCESZ-UHFFFAOYSA-N
SMILES:[As]#[Ga]
Synonyms:
  • Arsanylidynegallium
  • Arseniure de gallium
  • Arseniuro De Galio
  • Gallium Arsenic(-3) Anion
  • Gallium arsenide (99.9999% Ga) PURATREM 25mm and down polycrystalline pieces
  • Gallium arsenide (GaAs)
  • Gallium arsenide wafer
  • Gallium monoarsenide
  • Gallium monoarsenide (GaAs)
  • Galliumarsenid
  • See more synonyms
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