CAS 1303-11-3
:Indium arsenide
Description:
Indium arsenide (InAs) is a compound semiconductor with notable characteristics that make it significant in various technological applications, particularly in electronics and optoelectronics. It is a binary compound composed of indium and arsenic, exhibiting a zinc blende crystal structure. Indium arsenide is known for its high electron mobility, which allows for fast electronic devices, and it has a narrow bandgap, making it effective for infrared detection and imaging applications. The material is also sensitive to infrared radiation, making it useful in photodetectors and infrared lasers. Additionally, InAs has a high thermal stability and can be synthesized through various methods, including molecular beam epitaxy and chemical vapor deposition. However, it is important to note that indium arsenide is toxic due to the presence of arsenic, necessitating careful handling and disposal. Its unique properties have led to its use in high-speed transistors, infrared sensors, and as a substrate for other semiconductor materials.
Formula:AsIn
InChI:InChI=1S/As.In
InChI key:InChIKey=RPQDHPTXJYYUPQ-UHFFFAOYSA-N
SMILES:[As]#[In]
Synonyms:- Arsanylidyneindium
- Arsenic(-3) Anion
- Arseniure d'indium
- Arseniuro De Indio
- Indiam arsenide
- Indium arsenide (InAs)
- Indium monoarsenide
- Indium monoarsenide (InAs)
- Indium(+3) Cation
- Indiumarsenid
- Indium arsenide
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Found 5 products.
Indium arsenide, 99.9999% (metals basis)
CAS:<p>Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1-3m. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. Indium arsenide is also used for making of diode laser. This Thermo Scientific Chemicals brand product was origina</p>Formula:AsInPurity:99.9999%Molecular weight:189.74Indium arsenide, 99% (metals basis)
CAS:<p>In semiconductor electronics</p>Formula:AsInPurity:99%Molecular weight:189.74
