CAS 15112-89-7
:N,N,N′,N′,N′′,N′′-Hexamethylsilanetriamine
Description:
N,N,N′,N′,N′′,N′′-Hexamethylsilanetriamine, with the CAS number 15112-89-7, is an organosilicon compound characterized by its unique structure that includes a silicon atom bonded to three nitrogen atoms, each of which is further bonded to methyl groups. This compound is typically a colorless to pale yellow liquid and is known for its high thermal stability and low volatility. It exhibits properties such as solubility in organic solvents and potential reactivity with various electrophiles due to the presence of nitrogen atoms. Hexamethylsilanetriamine is often utilized in the synthesis of silicone polymers and as a ligand in coordination chemistry. Its ability to form stable complexes with metals makes it valuable in catalysis and materials science. Additionally, it may have applications in the field of nanotechnology and as a precursor in the production of silicon-based materials. Safety precautions should be observed when handling this compound, as it may pose health risks if inhaled or ingested.
Formula:C6H19N3Si
InChI:InChI=1S/C6H19N3Si/c1-7(2)10(8(3)4)9(5)6/h10H,1-6H3
InChI key:InChIKey=TWVSWDVJBJKDAA-UHFFFAOYSA-N
SMILES:[SiH](N(C)C)(N(C)C)N(C)C
Synonyms:- Brn 1901643
- Ls 1460
- N,N,N',N',N'',N''-Hexamethylsilanetriamine
- Silanetriamine, N,N,N',N',N'',N''-hexamethyl-
- Tri(dimethylamino)silane
- Tris(Dimethylamino)Silyl
- [Bis(dimethylamino)silyl]dimethylamine
- Tris(dimethylamino)silane
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Found 5 products.
Tris(dimethylamino)silane, 99+%, 3DMAS (99.999%-Si) PURATREM
CAS:<p>Tris(dimethylamino)silane, 99+%, 3DMAS (99.999%-Si) PURATREM</p>Formula:(CH3)2NSiHPurity:(99.999%-Si)Color and Shape:colorless to light yellow liq.Molecular weight:161.32Silanetriamine, N,N,N',N',N'',N''-hexamethyl-
CAS:Formula:C6H19N3SiPurity:95%Color and Shape:LiquidMolecular weight:161.3207Tris(dimethylamino)silane
CAS:Tris(dimethylamino)silanePurity:99%, 99.999%-SiMolecular weight:161.32g/molTRIS(DIMETHYLAMINO)SILANE
CAS:<p>ALD Material<br>Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.<br>Tris(dimethylamino)silane; Tris(dimethylamido)silylhydride; N,N,N',N',N'',N''-Hexamethylsilanetriamine<br>AIR TRANSPORT FORBIDDENVapor pressure, 4 °C: 1 6 mmHydrosilylates olefins in presence of Rh2Cl2(CO)4Reacts with ammonia to form silicon nitride prepolymersEmployed in low pressure CVD of silicon nitride<br></p>Formula:C6H19N3SiPurity:97%Color and Shape:Straw LiquidMolecular weight:161.32Tris(dimethylamino)silane, 99+%, 3DMAS (99.999%-Si) PURATREM, 14-8750, contained in 50 ml Swagelok® cylinder (96-1070) for CVD/ALD
CAS:<p>Tris(dimethylamino)silane, 99+%, 3DMAS (99.999%-Si) PURATREM, 14-8750, contained in 50 ml Swagelok® cylinder (96-1070) for CVD/ALD</p>Formula:(CH3)2NSiHPurity:(99.999%-Si)Color and Shape:colorless to light yellow liq.Molecular weight:161.32




