CAS 22398-80-7

Indium phosphide

Description:

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus, known for its direct bandgap properties, making it highly effective for optoelectronic applications, such as in light-emitting diodes (LEDs), laser diodes, and high-frequency electronics. It has a zinc blende crystal structure and exhibits excellent electron mobility, which is advantageous for high-speed electronic devices. Indium phosphide is characterized by its high thermal conductivity and resistance to radiation, making it suitable for space applications. The material is typically grown using methods like molecular beam epitaxy or metal-organic chemical vapor deposition. InP is also notable for its ability to operate efficiently in the infrared spectrum, which is beneficial for telecommunications and photonic devices. However, it is sensitive to moisture and requires careful handling and storage to maintain its integrity. Safety precautions should be taken when working with InP, as it can be toxic if ingested or inhaled, and proper laboratory protocols should be followed to mitigate exposure risks.

Formula: InP

InChI: InChI=1/In.P

InChI key: InChIKey=GPXJNWSHGFTCBW-UHFFFAOYSA-N

SMILES: [In]#P

Synonyms:

• Fosfuro De Indio
• Indium Phosphide
• Indium monophosphide
• Indiumphosphid
• Phosphure d'indium
• Indiumphosphidemetalsbasispiecesanddownblack
• Indiumphosphidepolycrystallinelump
• indium,phosphorus
• Indium(III) phosphide
• Indium phosphide (99.999%-In) PURATREM
• phosphanylidyneindium
• Indiumphsophidewafer

Indium(III) phosphide, polycrystalline lump, 99.99% (metals basis)

CAS: 22398-80-7

InP is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices. This T

Formula: InP

Purity: 99.99%

Color and Shape: Grey to black, Crystalline solid

Molecular weight: 145.79

Ref: 02-A15509

Indium(III) phosphide, 99.999% (metals basis)

CAS: 22398-80-7

The water soluble InP/ZnS core/shell QDs are a safer alternative to CdSe/ZnS QDs for biological applications, by comparing their toxicity in vitro (cell culture) and in vivo. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation an

Formula: InP

Purity: 99.999%

Molecular weight: 145.79

Ref: 02-036283

Indium(III) phosphide (99.999%-In) PURATREM

CAS: 22398-80-7

Indium(III) phosphide (99.999%-In) PURATREM

Formula: InP

Purity: (99.999%-In)

Color and Shape: black xtl.; 1/4'' pieces and down

Molecular weight: 145.79

Ref: 08-93-4926

Indium(III) phosphide

CAS: 22398-80-7

Formula: InP

Purity: ≥ 99.995% (trace metals basis)

Color and Shape: Silver, grey to black granules or crystals

Molecular weight: 145.79

Ref: 7W-GX9510

Indium(III) Phosphide

CAS: 22398-80-7

Indium(III) Phosphide

Purity: 99.99%

Molecular weight: 145.79g/mol

Ref: 54-OR1030831

Indium(III) phosphide, 99.9999% (metals basis)

CAS: 22398-80-7

Indium(III) phosphide is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct band gap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and label information may refer to the legacy brand. The original Alfa Aesar product / item code or SKU reference has not changed as a part of the brand transition to Thermo Scientific Chemicals.

Formula: InP

Purity: 99.9999%

Molecular weight: 145.79

Ref: 02-013974

INDIUM PHOSPHIDE

CAS: 22398-80-7

Formula: InP

Purity: 99.99%

Color and Shape: Solid

Molecular weight: 145.7918

Ref: IN-DA00BC94