Product Information
Name:COPPER(II) 2,4-PENTANEDIONATE
Brand:Gelest
Description:ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Copper (II) 2,4-pentanedionate; Cupric acetylacetonate
Color: pale blueMetal content: 2.8-24.5% CuVapor pressure, 100 °C: 0.001 mmVapor pressure, 163 °C': 0.1 mmSolubility, dimethylsulfoxide: 4.4 g/LSolubility, toluene: 0.4 g/LSolubility, water: 0.2 g/LStability constant, pKa dioxane/water: 9.7Catalyst for the reduction of nitro-aromatics NaBH4Catalyst for hydrogenation of unsaturated fatsCatalyst for flexible urethanesExcimer laser induces deposition of copperMetal-Organic Chemical Vapor Deposition (MOCVD) generates copper oxide filmsForms ferromagnetic chains on photolysis with diazodi-4-pyridylmethane
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Copper (II) 2,4-pentanedionate; Cupric acetylacetonate
Color: pale blueMetal content: 2.8-24.5% CuVapor pressure, 100 °C: 0.001 mmVapor pressure, 163 °C': 0.1 mmSolubility, dimethylsulfoxide: 4.4 g/LSolubility, toluene: 0.4 g/LSolubility, water: 0.2 g/LStability constant, pKa dioxane/water: 9.7Catalyst for the reduction of nitro-aromatics NaBH4Catalyst for hydrogenation of unsaturated fatsCatalyst for flexible urethanesExcimer laser induces deposition of copperMetal-Organic Chemical Vapor Deposition (MOCVD) generates copper oxide filmsForms ferromagnetic chains on photolysis with diazodi-4-pyridylmethane
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Chemical properties
Molecular weight:261.76
Formula:C10H14CuO4
Color/Form:Blue Solid