TANTALUM(V) ETHOXIDE
CAS: 6074-84-6
Ref. 3H-AKT810
| 5g | Discontinued | ||
| 1kg | Discontinued | ||
| 25g | Discontinued | ||
| 3kg | Discontinued |
Product Information
- Ditantalum decaethoxide
- Ethanol - Tantalum (5:1)
- Ethanol, tantalum(5+) salt
- Ethanol, tantalum(5+) salt (5:1)
- Ethyl alcohol, tantalum(5+) salt
- Pentaethoxytantalum
- Pentaethyl tantalate
- Tantalum ethoxide
- Tantalum ethylate
- Tantalum pentaethoxide
- See more synonyms
- Tantalum pentaethylate
- Tantalum pentethoxide
- Tantalum v ethoxide
- Tantalum(5+) Pentaethanolate
- Tantalum(5+) ethoxide
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Tantalum(V) ethoxide; Pentaethoxytantalum; Tantalum(5+) ethanolate
Soluble: toluene, ethanolVapor pressure, 20 °C: 8 mmVapor pressure, 50 °C: 26 mmMolecular complexity: 1.98Employed in sol-gel synthesis of bulk and thin film Ta2O5 as a capacitor dielectricEmployed in sol-gel synthesis of lithium tantalate ferroelectricsForms chiral complexes with substituted trialkanolamines useful in asymmetric catalysisEmployed in low-pressure CVD of optical interference filtersTavalite® jewelry in which alternating TaO5-SiO2 are deposited onto cubic zirconia
